SI4210DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

35.5mOhm @ 5A, 10V

Turn-Off Delay Time :

1 ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Number of Pins :

8

Weight :

506.605978mg

REACH SVHC :

Unknown

Max Power Dissipation :

2.7W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Operating Temperature :

150°C

Threshold Voltage :

2.5V

Current - Continuous Drain (Id) @ 25°C :

6.5A

Base Part Number :

SI4210

Published :

2005

Input Capacitance :

445pF

Fall Time (Typ) :

8 ns

Number of Elements :

2

Power Dissipation :

1.78W

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

445pF @ 15V

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Drain to Source Resistance :

35.5mOhm

Operating Temperature :

-55°C~150°C TJ

Power - Max :

2.7W

Rise Time :

55ns

Supplier Device Package :

8-SO

Number of Channels :

2

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

6.5A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On Max :

35.5 mΩ

RoHS Status :

ROHS3 Compliant