SGD04N60BUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

400V, 4A, 67 Ω, 15V

Published :

2007

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

19A

Turn On Time :

38 ns

Number of Elements :

1

Pbfree Code :

No

Turn Off Time-Nom (toff) :

368 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Factory Lead Time :

26 Weeks

Configuration :

Single

Switching Energy :

131µJ

Surface Mount :

yes

Td (on/off) @ 25°C :

22ns/237ns

Power - Max :

50W

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Current - Collector (Ic) (Max) :

9.4A

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate Charge :

24nC

Reach Compliance Code :

Compliant

IGBT Type :

NPT

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Additional Feature :

LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 4A

Pin Count :

3

Case Connection :

COLLECTOR