SD1127

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Tin/Lead (Sn/Pb)

Highest Frequency Band :

VERY HIGH FREQUENCY B

Operating Temperature :

200°C TJ

Polarity/Channel Type :

NPN

Mount :

Through Hole

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

18V

Terminal Form :

Wire

JESD-609 Code :

e0

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Elements :

1

Lead Free :

Lead Free

Max Power Dissipation :

8W

Collector-Base Capacitance-Max :

20pF

Factory Lead Time :

12 Weeks

Number of Pins :

3

Collector Emitter Breakdown Voltage :

18V

Collector Base Voltage (VCBO) :

36V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 50mA 5V

Configuration :

Single

ECCN Code :

EAR99

Packaging :

Bulk

Transistor Element Material :

SILICON

Package / Case :

TO-205AD, TO-39-3 Metal Can

Pbfree Code :

No

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Published :

2004

Max Frequency :

175MHz

Pin Count :

3

Output Power :

8W

Max Collector Current :

640mA

Frequency - Transition :

175MHz

Gain :

12dB