SD1127

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Operating Temperature :

200°C TJ

Polarity/Channel Type :

NPN

Gain :

12dB

Factory Lead Time :

12 Weeks

Collector Base Voltage (VCBO) :

36V

Number of Terminations :

3

Output Power :

8W

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Max Collector Current :

640mA

JESD-609 Code :

e0

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

18V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 50mA 5V

Transistor Type :

NPN

Pbfree Code :

No

Mount :

Through Hole

Collector-Base Capacitance-Max :

20pF

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

3

Terminal Form :

Wire

RoHS Status :

RoHS Compliant

Package / Case :

TO-205AD, TO-39-3 Metal Can

Configuration :

Single

Packaging :

Bulk

Number of Pins :

3

Number of Elements :

1

Frequency - Transition :

175MHz

Collector Emitter Voltage (VCEO) :

18V

Max Frequency :

175MHz

Mounting Type :

Through Hole

Max Power Dissipation :

8W

Highest Frequency Band :

VERY HIGH FREQUENCY B

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Lead Free :

Lead Free

Terminal Position :

BOTTOM