SCT3030ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

262W

Drain-source On Resistance-Max :

0.039Ohm

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Number of Channels :

1

Max Junction Temperature (Tj) :

175°C

JESD-609 Code :

e3

Mount :

Through Hole

Turn On Delay Time :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 18V

Drive Voltage (Max Rds On,Min Rds On) :

18V

Input Capacitance (Ciss) (Max) @ Vds :

1526pF @ 500V

Factory Lead Time :

21 Weeks

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Packaging :

Tube

Turn-Off Delay Time :

48 ns

Operating Temperature :

175°C TJ

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Number of Elements :

1

Vgs(th) (Max) @ Id :

5.6V @ 13.3mA

Number of Terminations :

3

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

39m Ω @ 27A, 18V

Pbfree Code :

yes

Vgs (Max) :

+22V, -4V

Height :

25.5mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

262W Tc

Continuous Drain Current (ID) :

70A

JESD-30 Code :

R-PSFM-T3