SCT3017ALGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity :

N

Gate-Source Voltage (Max) :

22(V)

Product Category :

MOSFET

Channel Type :

N

Drain-Source On-Volt :

650(V)

Channel Mode :

Enhancement

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

172 nC @ 18 V

Continuous Drain Current Id :

118

Packaging :

Rail/Tube

FET Type :

N-Channel

Product Type :

MOSFET

Subcategory :

MOSFETs

Vgs (Max) :

+22V, -4V

Supplier Device Package :

TO-247N

Series :

-

Mounting :

Through Hole

Package Type :

TO-247N

Power Dissipation (Max) :

427W

Operating Temperature :

175°C (TJ)

Manufacturer :

Rohm Semiconductor

Pin Count :

3 +Tab

Number of Elements :

1

Number of Channels :

1 Channel

Drive Voltage (Max Rds On, Min Rds On) :

18V

Power Dissipation :

427

RoHS :

Details

Type :

Power MOSFET

Continuous Drain Current :

118(A)

MSL :

MSL 1 - Unlimited

Operating Temperature Classification :

Military

Rad Hardened :

No

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

118A (Tc)

Maximum Operating Temperature :

+ 175 C

Drain to Source Voltage (Vdss) :

650 V

Operating Temp Range :

-55C to 175C

Vgs(th) (Max) @ Id :

5.6V @ 23.5mA

Input Capacitance (Ciss) (Max) @ Vds :

2884 pF @ 500 V

Rise Time :

44 ns

Package / Case :

TO-247-3

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Package :

Tube

Brand :

Rohm Semiconductor

Mounting Type :

Through Hole

Configuration :

Single

Rds On (Max) @ Id, Vgs :

22.1mOhm @ 47A, 18V