SCT3022ALGC11
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- Mfr.Part #
- SCT3022ALGC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 93A TO247N
- Stock
- 11,387
- In Stock ：
- 11,387
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2208pF @ 500V
- Factory Lead Time :
- 21 Weeks
- Threshold Voltage :
- 2.7V
- Turn-Off Delay Time :
- 61 ns
- Terminal Position :
- Single
- Power Dissipation-Max :
- 339W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 133nC @ 18V
- Drain-source On Resistance-Max :
- 0.0286ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 93A Tc
- Packaging :
- Tube
- FET Type :
- N-Channel
- Vgs (Max) :
- +22V, -4V
- Height :
- 25.5mm
- Pulsed Drain Current-Max (IDM) :
- 232A
- Vgs(th) (Max) @ Id :
- 5.6V @ 18.2mA
- Published :
- 2017
- Max Junction Temperature (Tj) :
- 175°C
- Continuous Drain Current (ID) :
- 93A
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 28.6m Ω @ 36A, 18V
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 650V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- 175°C TJ
- Power Dissipation :
- 339W
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Reach Compliance Code :
- not_compliant
- Turn On Delay Time :
- 25 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 22V
- Datasheets
- SCT3022ALGC11
N-Channel Tube 28.6m Ω @ 36A, 18V +22V, -4V 2208pF @ 500V 133nC @ 18V TO-247-3
SCT3022ALGC11 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2208pF @ 500V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 93A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 232A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 22V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.7V.A device like this reduces its overall power consumption when it uses drive voltage (18V).
SCT3022ALGC11 Features
a continuous drain current (ID) of 93A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 232A.
a threshold voltage of 2.7V
SCT3022ALGC11 Applications
There are a lot of ROHM Semiconductor
SCT3022ALGC11 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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