SCT2160KEC
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- Mfr.Part #
- SCT2160KEC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 22A TO247
- Stock
- 8,357
- In Stock ：
- 8,357
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 25ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Power Dissipation-Max :
- 165W Tc
- Width :
- 20.95mm
- Drain to Source Voltage (Vdss) :
- 1200V
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 800V
- Height :
- 5.03mm
- Threshold Voltage :
- 4V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 15.9mm
- Rds On (Max) @ Id, Vgs :
- 208m Ω @ 7A, 18V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 4 V
- Vgs (Max) :
- +22V, -6V
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 22A
- Factory Lead Time :
- 19 Weeks
- Number of Pins :
- 3
- Number of Channels :
- 1
- Operating Temperature :
- 175°C TJ
- FET Type :
- N-Channel
- Published :
- 2012
- Pulsed Drain Current-Max (IDM) :
- 55A
- Package / Case :
- TO-247-3
- Turn-Off Delay Time :
- 67 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Lead Free :
- Lead Free
- Resistance :
- 160mOhm
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 27 ns
- Drain to Source Breakdown Voltage :
- 1.2kV
- Gate to Source Voltage (Vgs) :
- 4V
- Turn On Delay Time :
- 23 ns
- Datasheets
- SCT2160KEC
N-Channel Tube 208m Ω @ 7A, 18V +22V, -6V 1200pF @ 800V 62nC @ 18V 1200V TO-247-3
SCT2160KEC Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 800V.This device has a continuous drain current (ID) of [22A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 67 ns.A maximum pulsed drain current of 55A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 4V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (18V).
SCT2160KEC Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 67 ns
based on its rated peak drain current 55A.
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2160KEC Applications
There are a lot of ROHM Semiconductor
SCT2160KEC applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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