SCT20N120
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- Mfr.Part #
- SCT20N120
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1200V 20A HIP247
- Stock
- 3,384
- In Stock ：
- 3,384
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 10A, 20V
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 20A
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 1200V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drain to Source Breakdown Voltage :
- 1.2kV
- Rise Time :
- 16ns
- Turn-Off Delay Time :
- 27 ns
- Base Part Number :
- SCT20
- Packaging :
- Tube
- Turn On Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 400V
- Operating Temperature :
- -55°C~200°C TJ
- Number of Channels :
- 1
- Power Dissipation-Max :
- 175W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 20V
- Mount :
- Through Hole
- Weight :
- 38.000013g
- Vgs (Max) :
- +25V, -10V
- Fall Time (Typ) :
- 17 ns
- Datasheets
- SCT20N120
N-Channel Tube 290m Ω @ 10A, 20V +25V, -10V 650pF @ 400V 45nC @ 20V 1200V TO-247-3
SCT20N120 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 650pF @ 400V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 27 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 20V volts (20V).
SCT20N120 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 27 ns
a 1200V drain to source voltage (Vdss)
SCT20N120 Applications
There are a lot of STMicroelectronics
SCT20N120 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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