SCT2120AFC
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- Mfr.Part #
- SCT2120AFC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 29A TO220AB
- Stock
- 13,587
- In Stock ：
- 13,587
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 60 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 18V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 72A
- Published :
- 2011
- Rds On (Max) @ Id, Vgs :
- 156m Ω @ 10A, 18V
- Weight :
- 6.000006g
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 19 ns
- Operating Temperature :
- 175°C TJ
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Vgs (Max) :
- +22V, -6V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 500V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 650V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Factory Lead Time :
- 19 Weeks
- Power Dissipation-Max :
- 165W Tc
- Gate to Source Voltage (Vgs) :
- 22V
- Rise Time :
- 31ns
- Vgs(th) (Max) @ Id :
- 4V @ 3.3mA
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Turn On Delay Time :
- 22 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 29A
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Datasheets
- SCT2120AFC
N-Channel Tube 156m Ω @ 10A, 18V +22V, -6V 1200pF @ 500V 61nC @ 18V TO-220-3
SCT2120AFC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 500V.This device conducts a continuous drain current (ID) of 29A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 72A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).
SCT2120AFC Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V
SCT2120AFC Applications
There are a lot of ROHM Semiconductor
SCT2120AFC applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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