SCT2120AFC
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- Mfr.Part #
- SCT2120AFC
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 29A TO220AB
- Stock
- 13,587
- In Stock ：
- 13,587
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 500V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 175°C TJ
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Number of Channels :
- 1
- Number of Elements :
- 1
- Fall Time (Typ) :
- 19 ns
- Gate to Source Voltage (Vgs) :
- 22V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Factory Lead Time :
- 19 Weeks
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 3.3mA
- REACH SVHC :
- No SVHC
- Published :
- 2011
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 165W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Weight :
- 6.000006g
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 31ns
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 18V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 156m Ω @ 10A, 18V
- Continuous Drain Current (ID) :
- 29A
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- +22V, -6V
- Turn On Delay Time :
- 22 ns
- Turn-Off Delay Time :
- 60 ns
- Datasheets
- SCT2120AFC
N-Channel Tube 156m Ω @ 10A, 18V +22V, -6V 1200pF @ 500V 61nC @ 18V TO-220-3
SCT2120AFC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 500V.This device conducts a continuous drain current (ID) of 29A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 72A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 22V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 18V volts (18V).
SCT2120AFC Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V
SCT2120AFC Applications
There are a lot of ROHM Semiconductor
SCT2120AFC applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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