S200-50

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

HIGH FREQUENCY B

Terminal Finish :

TIN LEAD

Pin Count :

4

Package / Case :

55HX

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mounting Type :

Chassis Mount

Number of Elements :

1

JESD-609 Code :

e0

JESD-30 Code :

O-CRFM-F4

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Case Connection :

Emitter

Max Power Dissipation :

320W

RoHS Status :

RoHS Compliant

Published :

2004

Packaging :

Bulk

Frequency - Transition :

1.5MHz~30MHz

Collector Emitter Breakdown Voltage :

110V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 1A 5V

Gain :

12dB ~ 14.5dB

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Configuration :

Single

Max Frequency :

30MHz

Max Collector Current :

30A

Terminal Form :

Flat

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Transistor Type :

NPN

Number of Pins :

55

Terminal Position :

Radial

Collector Emitter Voltage (VCEO) :

110V

Pbfree Code :

No