RSS125N03FU6TB
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- Mfr.Part #
- RSS125N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.5A 8SOP
- Stock
- 17,812
- In Stock ：
- 17,812
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 5V
- Resistance :
- 8.6mOhm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 69 ns
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2004
- Factory Lead Time :
- 17 Weeks
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Nominal Vgs :
- 2.5 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Turn On Delay Time :
- 10 ns
- Threshold Voltage :
- 2.5V
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 2W Ta
- Power Dissipation :
- 2W
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Rds On (Max) @ Id, Vgs :
- 8.9m Ω @ 12.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 10V
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 12.5A
- Fall Time (Typ) :
- 30 ns
- Dual Supply Voltage :
- 30V
- FET Type :
- N-Channel
- Rise Time :
- 17ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Datasheets
- RSS125N03FU6TB
N-Channel Tape & Reel (TR) 8.9m Ω @ 12.5A, 10V 1670pF @ 10V 28nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS125N03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1670pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 69 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS125N03FU6TB Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 69 ns
a threshold voltage of 2.5V
RSS125N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS125N03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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