RSS100N03FRATB
- Mfr.Part #
- RSS100N03FRATB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8SOP
- Stock
- 2,511
- In Stock :
- 2,511
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G8
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Drain Current-Max (Abs) (ID) :
- 10A
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Packaging :
- Cut Tape (CT)
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 2017
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Drain-source On Resistance-Max :
- 0.0189Ohm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Terminations :
- 8
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 13.3m Ω @ 10A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2W Ta
- Datasheets
- RSS100N03FRATB

N-Channel Cut Tape (CT) 13.3m Ω @ 10A, 10V ±20V 1070pF @ 10V 20nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
RSS100N03FRATB Overview
A device's maximal input capacitance is 1070pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 10A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 10V).
RSS100N03FRATB Features
based on its rated peak drain current 40A.
a 30V drain to source voltage (Vdss)
RSS100N03FRATB Applications
There are a lot of ROHM Semiconductor
RSS100N03FRATB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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