RSS100N03FU6TB
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- Mfr.Part #
- RSS100N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8SOP
- Stock
- 8,448
- In Stock ：
- 8,448
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 10V
- Nominal Vgs :
- 2.5 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- Turn-Off Delay Time :
- 55 ns
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2W Ta
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 2.5V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Dual Supply Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 10 ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Power Dissipation :
- 2W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 2004
- Resistance :
- 18.9mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Fall Time (Typ) :
- 24 ns
- Continuous Drain Current (ID) :
- 10A
- Rise Time :
- 16ns
- Datasheets
- RSS100N03FU6TB
N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V 1070pF @ 10V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS100N03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1070pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS100N03FU6TB Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 55 ns
a threshold voltage of 2.5V
RSS100N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS100N03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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