RSS100N03FU6TB
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- Mfr.Part #
- RSS100N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8SOP
- Stock
- 8,448
- In Stock ：
- 8,448
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 18.9mOhm
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- 150°C TJ
- Dual Supply Voltage :
- 30V
- Nominal Vgs :
- 2.5 V
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- Turn On Delay Time :
- 10 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Fall Time (Typ) :
- 24 ns
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 10A
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- Power Dissipation :
- 2W
- Power Dissipation-Max :
- 2W Ta
- Threshold Voltage :
- 2.5V
- Rise Time :
- 16ns
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn-Off Delay Time :
- 55 ns
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 10V
- Datasheets
- RSS100N03FU6TB
N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V 1070pF @ 10V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS100N03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1070pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS100N03FU6TB Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 55 ns
a threshold voltage of 2.5V
RSS100N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS100N03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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