RJH60D6DPM-00#T1

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Mfr.Part #
RJH60D6DPM-00#T1
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-3PFM, SC-93-3
Datasheet
Download
Description
IGBT 600V 80A 50W TO-3PFM
Stock
8,861
In Stock :
8,861

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - IGBTs - Single
Collector Emitter Voltage (VCEO) :
2.2V
Reverse Recovery Time :
100 ns
RoHS Status :
ROHS3 Compliant
Gate Charge :
104nC
Pbfree Code :
yes
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 40A
Power - Max :
50W
Td (on/off) @ 25°C :
50ns/160ns
Max Collector Current :
80A
Packaging :
Tube
Input Type :
Standard
Element Configuration :
Single
Factory Lead Time :
16 Weeks
Radiation Hardening :
No
Turn On Delay Time :
50 ns
Max Power Dissipation :
50W
Operating Temperature :
150°C TJ
Turn-Off Delay Time :
160 ns
IGBT Type :
Trench
Number of Pins :
3
Base Part Number :
RJH60D
Package / Case :
TO-3PFM, SC-93-3
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
600V
Switching Energy :
850μJ (on), 600μJ (off)
Lead Free :
Lead Free
Published :
2012
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
300V, 40A, 5 Ω, 15V
Mounting Type :
Through Hole
Datasheets
RJH60D6DPM-00#T1
Introducing Transistors - IGBTs - Single Intersil (Renesas Electronics Corporation) RJH60D6DPM-00#T1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:RJH60D, Package / Case:TO-3PFM, SC-93-3, Mounting Type:Through Hole, RJH60D6DPM-00#T1 pinout, RJH60D6DPM-00#T1 datasheet PDF, RJH60D6DPM-00#T1 amp .Beyond Transistors - IGBTs - Single Intersil (Renesas Electronics Corporation) RJH60D6DPM-00#T1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) RJH60D6DPM-00#T1


RJH60D6DPM-00#T1 datasheet pdf and Transistors - IGBTs - Single product details from Renesas Electronics America stock available at

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