RGTH60TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Test Condition :

400V, 30A, 10 Ω, 15V

Turn Off Time-Nom (toff) :

179 ns

Turn On Time :

67 ns

Reverse Recovery Time :

58ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 30A

Reach Compliance Code :

not_compliant

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Surface Mount :

No

Td (on/off) @ 25°C :

27ns/105ns

Mounting Type :

Through Hole

Case Connection :

Isolated

Package / Case :

TO-3PFM, SC-93-3

Input Type :

Standard

Operating Temperature :

-40°C~175°C TJ

Power - Max :

61W

Current - Collector Pulsed (Icm) :

120A

Current - Collector (Ic) (Max) :

28A

Voltage - Collector Emitter Breakdown (Max) :

650V

Terminal Position :

Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge :

58nC

IGBT Type :

Trench Field Stop