RCD080N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

850mW Ta 20W Tc

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

250V

ECCN Code :

EAR99

JESD-609 Code :

e2

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

20W

Width :

5.8mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 25V

FET Type :

N-Channel

Terminal Finish :

Tin/Copper (Sn98Cu2)

Terminal Form :

Gull wing

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

10 Weeks

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Turn-Off Delay Time :

40 ns

Pin Count :

3

Rise Time :

40ns

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 1mA

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

8A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

300m Ω @ 4A, 10V

Turn On Delay Time :

30 ns

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.5mm

Element Configuration :

Single

Number of Terminations :

2

Number of Pins :

3

Length :

6.7mm

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

4.67 mJ