RCD050N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Drain Current-Max (Abs) (ID) :

5A

Operating Temperature :

150°C TJ

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

618m Ω @ 2.5A, 10V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

20W Tc

Continuous Drain Current (ID) :

5A

Vgs (Max) :

±30V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

Number of Pins :

3

Turn-Off Delay Time :

22 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Terminations :

2

Factory Lead Time :

40 Weeks

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

DS Breakdown Voltage-Min :

200V

Turn On Delay Time :

17 ns

Fall Time (Typ) :

11 ns

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2011

Drain-source On Resistance-Max :

0.618Ohm

Operating Mode :

ENHANCEMENT MODE