RCD040N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

250V

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Number of Elements :

1

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

1.61 mJ

Drain Current-Max (Abs) (ID) :

4A

Turn On Delay Time :

17 ns

Pulsed Drain Current-Max (IDM) :

16A

Published :

2011

Continuous Drain Current (ID) :

4A

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Power Dissipation-Max :

20W Tc

Rise Time :

15ns

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

20 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

1Ohm

Vgs (Max) :

±30V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Power Dissipation :

20W

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel