QS5U21TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.24Ohm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 10V

Number of Terminations :

5

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Pin Count :

5

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

20 Weeks

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Current Rating :

-1.5A

Number of Pins :

5

Voltage - Rated DC :

-20V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Turn On Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Feature :

Schottky Diode (Isolated)

Terminal Position :

Dual

Number of Elements :

1

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Vgs (Max) :

±12V

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

ECCN Code :

EAR99

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Nominal Vgs :

-2 V

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.5A, 4.5V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Rise Time :

10ns

Power Dissipation-Max :

1.25W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Dual Supply Voltage :

-20V

Continuous Drain Current (ID) :

1.5A