QS5U16TR
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- Mfr.Part #
- QS5U16TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2A TSMT5
- Stock
- 30,524
- In Stock ：
- 30,524
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 4.5V
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Vgs (Max) :
- ±12V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 10 ns
- Terminal Position :
- Dual
- Factory Lead Time :
- 20 Weeks
- Number of Pins :
- 5
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 2A, 4.5V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Pin Count :
- 5
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 12V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 10ns
- Power Dissipation-Max :
- 900mW Ta
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Power Dissipation :
- 1.25W
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 30V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 10V
- Turn On Delay Time :
- 8 ns
- FET Feature :
- Schottky Diode (Isolated)
- Pbfree Code :
- yes
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Threshold Voltage :
- 1.5V
- Continuous Drain Current (ID) :
- 2A
- Drain Current-Max (Abs) (ID) :
- 2A
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 21 ns
- Transistor Element Material :
- SILICON
- Current Rating :
- 2A
- Datasheets
- QS5U16TR
N-Channel Tape & Reel (TR) 100m Ω @ 2A, 4.5V ±12V 175pF @ 10V 3.9nC @ 4.5V SOT-23-5 Thin, TSOT-23-5
QS5U16TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 175pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.5V.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
QS5U16TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 1.5V
QS5U16TR Applications
There are a lot of ROHM Semiconductor
QS5U16TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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