QS5U33TR
- Mfr.Part #
- QS5U33TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A TSMT5
- Stock
- 8,696
- In Stock :
- 8,696
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Factory Lead Time :
- 20 Weeks
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- FET Type :
- P-Channel
- Nominal Vgs :
- -2.5 V
- Turn-Off Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 10V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- FET Feature :
- Schottky Diode (Isolated)
- Terminal Position :
- Dual
- Number of Pins :
- 5
- Drain to Source Breakdown Voltage :
- -30V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.4nC @ 5V
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Rise Time :
- 6ns
- Dual Supply Voltage :
- -30V
- Power Dissipation-Max :
- 1.25W Ta
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 2A
- Terminal Finish :
- TIN SILVER COPPER
- Power Dissipation :
- 1.25W
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 6 ns
- Published :
- 2007
- Element Configuration :
- Single
- Package / Case :
- SOT-23-5 Thin, TSOT-23-5
- Pin Count :
- 5
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Turn On Delay Time :
- 7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 2A
- Datasheets
- QS5U33TR

P-Channel Tape & Reel (TR) 135m Ω @ 2A, 10V ±20V 310pF @ 10V 3.4nC @ 5V 30V SOT-23-5 Thin, TSOT-23-5
QS5U33TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 310pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
QS5U33TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
a 30V drain to source voltage (Vdss)
QS5U33TR Applications
There are a lot of ROHM Semiconductor
QS5U33TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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