PQMD3Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Power - Max :

230mW

Max Power Dissipation :

230mW

Factory Lead Time :

4 Weeks

Reference Standard :

AEC-Q101; IEC-60134

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

6-XFDFN Exposed Pad

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10k Ω

JESD-30 Code :

R-PDSO-N6

Transistor Element Material :

SILICON

Number of Terminations :

6

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Frequency - Transition :

230MHz 180MHz

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Collector Emitter Voltage (VCEO) :

150mV

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transition Frequency :

230MHz

Transistor Application :

SWITCHING

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Polarity/Channel Type :

NPN AND PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR