PQMD12Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Max Power Dissipation :

350mW

Case Connection :

COLLECTOR

Transition Frequency :

230MHz

Number of Elements :

2

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Package / Case :

6-XFDFN Exposed Pad

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Saturation Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

hFE Min :

80

Pin Count :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Polarity :

NPN, PNP

Radiation Hardening :

No

Published :

2015

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

47k Ω

Collector Base Voltage (VCBO) :

50V

Number of Terminations :

6

Gain Bandwidth Product :

230MHz

Mounting Type :

Surface Mount

Frequency - Transition :

230MHz 180MHz

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

10V

Continuous Collector Current :

100mA

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING