PQMD16Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

350mW

JESD-30 Code :

R-PDSO-N6

Resistor - Base (R1) :

22k Ω

Mount :

Surface Mount

Package / Case :

6-XFDFN Exposed Pad

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101; IEC-60134

Frequency - Transition :

230MHz 180MHz

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

150mV

Case Connection :

COLLECTOR

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 2.13

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

6

Terminal Form :

NO LEAD

Transition Frequency :

230MHz

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Polarity/Channel Type :

NPN AND PNP

Number of Elements :

2

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Power - Max :

350mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR