PQMD13Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

6-XFDFN Exposed Pad

Number of Terminations :

6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current - Collector (Ic) (Max) :

100mA

JESD-30 Code :

R-PDSO-N6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

47k Ω

Transistor Element Material :

SILICON

Number of Elements :

2

Voltage - Collector Emitter Breakdown (Max) :

50V

Terminal Form :

NO LEAD

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Resistor - Base (R1) :

4.7k Ω

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Polarity/Channel Type :

NPN AND PNP

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Transition Frequency :

230MHz

Pin Count :

6

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

230MHz 180MHz

Reference Standard :

AEC-Q101; IEC-60134

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

350mW

Series :

Automotive, AEC-Q101