PMWD15UN,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

4.2W

FET Feature :

Logic Level Gate

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 16V

Current - Continuous Drain (Id) @ 25°C :

11.6A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

22.2nC @ 4.5V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 5A, 4.5V