PMWD19UN,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 1mA

Rds On (Max) @ Id, Vgs :

23mOhm @ 3.5A, 4.5V

Supplier Device Package :

8-TSSOP

Published :

1997

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1478pF @ 10V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Power - Max :

2.3W

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

5.6A

Packaging :

Tape and Reel (TR)