PMST2369,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Max Collector Current :

200mA

Power Dissipation :

200mW

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Operating Temperature :

150°C TJ

Frequency :

500MHz

Max Breakdown Voltage :

15V

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

15V

Number of Elements :

1

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

JESD-609 Code :

e3

Number of Pins :

3

Gain Bandwidth Product :

500MHz

Collector-Base Capacitance-Max :

4pF

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Transition Frequency :

500MHz

Collector Base Voltage (VCBO) :

40V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

15V

Base Part Number :

PMST2369

Current - Collector Cutoff (Max) :

400nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Mount :

Surface Mount

hFE Min :

40

Series :

Automotive, AEC-Q101

Package / Case :

SC-70, SOT-323

Radiation Hardening :

No

Mounting Type :

Surface Mount