PMST2222,115
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- Mfr.Part #
- PMST2222,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST2222 - SMALL SIGNAL
- Stock
- 2,775
- In Stock ：
- 2,775
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Max Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Radiation Hardening :
- No
- Turn Off Time-Max (toff) :
- 250ns
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 250MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Frequency :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 250MHz
- Datasheets
- PMST2222,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2222,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
PMST2222,115 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
PMST2222,115 Applications
There are a lot of Nexperia USA Inc.
PMST2222,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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