PMST2369,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Transistor Type :

NPN

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

15V

Base Part Number :

PMST2369

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

400nA ICBO

Max Collector Current :

200mA

Package / Case :

SC-70, SOT-323

Collector-Base Capacitance-Max :

4pF

Collector Emitter Voltage (VCEO) :

15V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transition Frequency :

500MHz

Transistor Element Material :

SILICON

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Terminal Form :

Gull wing

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Position :

Dual

Mount :

Surface Mount

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Gain Bandwidth Product :

500MHz

Frequency :

500MHz

Collector Base Voltage (VCBO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

200mW

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Factory Lead Time :

4 Weeks

Series :

Automotive, AEC-Q101

Published :

2009

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

200mW