PMST2369,115
- Mfr.Part #
- PMST2369,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 15V 200MA SOT323
- Stock
- 209
- In Stock :
- 209
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Transition Frequency :
- 500MHz
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Pin Count :
- 3
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 40V
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Base Part Number :
- PMST2369
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector-Base Capacitance-Max :
- 4pF
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 200mA
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 500MHz
- Max Breakdown Voltage :
- 15V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- hFE Min :
- 40
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 400nA ICBO
- Frequency :
- 500MHz
- Datasheets
- PMST2369,115

NPN 150°C TJ 400nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2369,115 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 1mA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
PMST2369,115 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 500MHz
PMST2369,115 Applications
There are a lot of Nexperia USA Inc.
PMST2369,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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