PMDPB95XNE2X

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

258pF @ 15V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

S-PDSO-N6

Power - Max :

510mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Terminal Form :

NO LEAD

Factory Lead Time :

8 Weeks

DS Breakdown Voltage-Min :

30V

Pin Count :

6

FET Feature :

Standard

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Package / Case :

6-UDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2016

Drain Current-Max (Abs) (ID) :

2.7A

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.099Ohm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Reference Standard :

IEC-60134

Rds On (Max) @ Id, Vgs :

99m Ω @ 2.8A, 4.5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED