PMDPB58UPE,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

14.4A

Radiation Hardening :

No

Package / Case :

6-UDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

950mV @ 250μA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Turn On Delay Time :

7 ns

Case Connection :

DRAIN

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Number of Terminations :

6

Rise Time :

15ns

Pin Count :

6

Drain to Source Voltage (Vdss) :

20V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

804pF @ 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Published :

2012

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.6A

Turn-Off Delay Time :

41 ns

Fall Time (Typ) :

14 ns

Max Power Dissipation :

515mW

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

67m Ω @ 2A, 4.5V

Max Dual Supply Voltage :

-20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE