PMBT2222,215
- Mfr.Part #
- PMBT2222,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.6A TO236AB
- Stock
- 2,610
- In Stock :
- 2,610
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Gain Bandwidth Product :
- 250MHz
- Turn Off Time-Max (toff) :
- 250ns
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- Manufacturer Package Identifier :
- PMBT2222_PMBT2222A
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2010
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 60V
- Additional Feature :
- HIGH CURRENT DRIVER
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 250MHz
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Base Part Number :
- PMBT2222
- Collector-Base Capacitance-Max :
- 8pF
- hFE Min :
- 30
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- PMBT2222,215

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT2222,215 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
PMBT2222,215 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
PMBT2222,215 Applications
There are a lot of Nexperia USA Inc.
PMBT2222,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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