PMBT2222,215
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- Mfr.Part #
- PMBT2222,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 600MA SOT23
- Stock
- 2,610
- In Stock ：
- 2,610
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Element Configuration :
- Single
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Max Collector Current :
- 600mA
- Turn Off Time-Max (toff) :
- 250ns
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 30V
- Manufacturer Package Identifier :
- PMBT2222_PMBT2222A
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 250MHz
- Frequency :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Additional Feature :
- HIGH CURRENT DRIVER
- Terminal Finish :
- Tin (Sn)
- Collector-Base Capacitance-Max :
- 8pF
- Number of Terminations :
- 3
- Base Part Number :
- PMBT2222
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Pin Count :
- 3
- hFE Min :
- 30
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Published :
- 2010
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- PMBT2222,215
PMBT2222,215 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT2222,215 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
PMBT2222,215 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
PMBT2222,215 Applications
There are a lot of Nexperia USA Inc.
PMBT2222,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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