PMBT2222A,235

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Mfr.Part #
PMBT2222A,235
Manufacturer
NXP Semiconductors
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
NEXPERIA PMBT2222A - SMALL SIGNA
Stock
62,315
In Stock :
62,315

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
250mW
Collector-Base Capacitance-Max :
8pF
Max Breakdown Voltage :
40V
Radiation Hardening :
No
Number of Terminations :
3
Turn Off Time-Max (toff) :
250ns
Emitter Base Voltage (VEBO) :
6V
Transistor Application :
SWITCHING
Transistor Type :
NPN
Transition Frequency :
300MHz
Collector Emitter Voltage (VCEO) :
40V
Number of Elements :
1
Base Part Number :
PMBT2222A
Gain Bandwidth Product :
300MHz
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Frequency :
300MHz
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Max Collector Current :
600mA
VCEsat-Max :
1 V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Additional Feature :
HIGH CURRENT DRIVER
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
JESD-609 Code :
e3
Series :
Automotive, AEC-Q101
Current - Collector Cutoff (Max) :
10μA ICBO
Factory Lead Time :
4 Weeks
Transistor Element Material :
SILICON
Number of Pins :
3
Max Power Dissipation :
250mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2010
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
75V
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Terminal Finish :
Tin (Sn)
Pin Count :
3
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Collector Emitter Breakdown Voltage :
40V
Mount :
Surface Mount
Datasheets
PMBT2222A,235
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PMBT2222A,235 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:PMBT2222A, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, PMBT2222A,235 pinout, PMBT2222A,235 datasheet PDF, PMBT2222A,235 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PMBT2222A,235 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PMBT2222A,235


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PMBT2222A,235 Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 600mA volts is possible.

PMBT2222A,235 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz


PMBT2222A,235 Applications


There are a lot of Nexperia USA Inc.
PMBT2222A,235 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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