PMBT2222,235

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Max Power Dissipation :

250mW

Published :

2010

Polarity/Channel Type :

NPN

Additional Feature :

HIGH CURRENT DRIVER

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Turn Off Time-Max (toff) :

250ns

Current - Collector Cutoff (Max) :

10nA ICBO

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Base Part Number :

PMBT2222

Transistor Type :

NPN

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

600mA

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

250MHz

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

30V

Pin Count :

3

Transistor Element Material :

SILICON

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transition Frequency :

250MHz

Collector-Base Capacitance-Max :

8pF

Number of Elements :

1

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

30V

Mount :

Surface Mount

Power Dissipation :

250mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)