PHD38N02LT,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

179A

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

12.5ns

Published :

2007

Max Dual Supply Voltage :

20V

Drain-source On Resistance-Max :

0.016Ohm

Surface Mount :

yes

Power Dissipation :

57.6W

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

15.1nC @ 5V

Factory Lead Time :

26 Weeks

Series :

TrenchMOS™

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

44.7A Tc

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±12V

Number of Pins :

3

Terminal Form :

Gull wing

Fall Time (Typ) :

23 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

44.7A

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Turn-Off Delay Time :

30 ns

JESD-609 Code :

e3

Turn On Delay Time :

4 ns

Power Dissipation-Max :

57.6W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 5V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 20V

Number of Terminations :

2

HTS Code :

8541.29.00.75

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE