PHD34NQ10T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1704pF @ 25V

Drain Current-Max (Abs) (ID) :

35A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Vgs (Max) :

±20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Power Dissipation-Max :

136W Tc

Published :

2010

Pulsed Drain Current-Max (IDM) :

140A

Avalanche Energy Rating (Eas) :

170 mJ

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin

Pin Count :

3

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

FET Type :

N-Channel

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

40m Ω @ 17A, 10V

Drain-source On Resistance-Max :

0.04Ohm