PHD36N03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Series :

TrenchMOS™

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.04Ohm

Vgs (Max) :

±20V

Power Dissipation-Max :

57.6W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Published :

2006

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

43.4A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

17m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

43.4A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

173.6A

Surface Mount :

yes

ECCN Code :

EAR99

Number of Terminations :

2