PHD3055E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.5A, 10V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.15Ohm

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

41A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Drain Current-Max (Abs) (ID) :

10.3A

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

33W Tc

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

25 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63