PHD37N06LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

37A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 1mA

Pulsed Drain Current-Max (IDM) :

148A

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 5V

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Case Connection :

DRAIN

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin

Series :

TrenchMOS™

Rds On (Max) @ Id, Vgs :

32m Ω @ 17A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±13V

Power Dissipation-Max :

100W Tc

Number of Terminations :

2

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

45 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Published :

1998

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.035Ohm

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE