PHB110NQ08T,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Turn On Delay Time :

35 ns

Rise Time :

107ns

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

245

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 25V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn-Off Delay Time :

183 ns

Power Dissipation-Max :

230W Tc

Pulsed Drain Current-Max (IDM) :

440A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

113.1nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

FET Type :

N-Channel

Power Dissipation :

230W

ECCN Code :

EAR99

Number of Elements :

1

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.009Ohm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Max Dual Supply Voltage :

75V

Fall Time (Typ) :

100 ns

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Breakdown Voltage :

75V

Number of Pins :

3

Published :

1997

Continuous Drain Current (ID) :

75A

Pin Count :

3

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

Number of Terminations :

2