PHB101NQ04T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.008Ohm

Case Connection :

DRAIN

Terminal Finish :

Tin

Drain Current-Max (Abs) (ID) :

75A

Avalanche Energy Rating (Eas) :

200 mJ

ECCN Code :

EAR99

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

240A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

36.6nC @ 10V

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pin Count :

3

Number of Terminations :

2

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

DS Breakdown Voltage-Min :

40V

Number of Elements :

1

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

157W Tc

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2