PHB119NQ06T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 25V

Avalanche Energy Rating (Eas) :

280 mJ

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 25A, 10V

Power Dissipation-Max :

200W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

240A

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Drain-source On Resistance-Max :

0.0071Ohm

Number of Elements :

1

Number of Terminations :

2

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING

Terminal Position :

Single

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSSO-G2