PHB11N06LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Single

Vgs (Max) :

±15V

Drain Current-Max (Abs) (ID) :

10.3A

Pin Count :

3

Rds On (Max) @ Id, Vgs :

130m Ω @ 5.5A, 10V

Published :

1999

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Mounting Type :

Surface Mount

Power Dissipation-Max :

33W Tc

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

25 mJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

41A

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

55V

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.15Ohm

FET Type :

N-Channel

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V