PHB110NQ06LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±15V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0093Ohm

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 1mA

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 5V

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Number of Terminations :

2

Published :

1997

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

240A

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

55V

Input Capacitance (Ciss) (Max) @ Vds :

3960pF @ 25V

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

200W Tc

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

280 mJ

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3