PBLS6005D,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 150 @ 500mA 5V

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

SC-74, SOT-457

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Current - Collector Cutoff (Max) :

1μA 100nA

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Element Material :

SILICON

Base Part Number :

PBLS6005

Number of Elements :

2

JESD-30 Code :

R-PDSO-G6

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 340mV @ 100mA, 1A

Resistor - Base (R1) :

47k Ω

Frequency - Transition :

185MHz

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

4 Weeks

Transistor Type :

1 NPN Pre-Biased, 1 PNP

JESD-609 Code :

e3

Transition Frequency :

185MHz

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Published :

2009

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector (Ic) (Max) :

100mA 700mA

Power - Max :

600mW