PBLS1503Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 100mA. 2V

Resistor - Emitter Base (R2) :

10k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 15V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Length :

2.2mm

Polarity :

NPN, PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

15V

Factory Lead Time :

4 Weeks

Published :

2004

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA

Emitter Base Voltage (VEBO) :

1.1V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Current - Collector (Ic) (Max) :

100mA 500mA

Mounting Type :

Surface Mount

Max Breakdown Voltage :

15V

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Base (R1) :

10k Ω

JESD-609 Code :

e3

Min Operating Temperature :

-65°C

Max Collector Current :

500mA

Transition Frequency :

280MHz

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

Current - Collector Cutoff (Max) :

1μA 100nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.35mm

Height :

1mm

Pin Count :

6

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

150mV

Max Operating Temperature :

150°C

Base Part Number :

PBLS1503

Frequency - Transition :

280MHz

Max Power Dissipation :

300mW

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Collector Emitter Voltage (VCEO) :

150mV

Terminal Finish :

Tin (Sn)