PBLS1503V,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation-Max (Abs) :

0.3W

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Frequency - Transition :

280MHz

Current - Collector Cutoff (Max) :

1μA 100nA

Current - Collector (Ic) (Max) :

100mA 500mA

JESD-30 Code :

R-PDSO-F6

Published :

2009

JESD-609 Code :

e3

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Polarity/Channel Type :

NPN AND PNP

Power - Max :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Resistor - Base (R1) :

10k Ω

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Transistor Application :

SWITCHING

Terminal Position :

Dual

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Transition Frequency :

280MHz

Packaging :

Tape and Reel (TR)

Base Part Number :

PBLS1503

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 100mA. 2V

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V 15V